BC857S

BC857S Elektronische Bauelemente RoHS Compliant Product PNP Silicon Multi-Chip Transistor SOT-363 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) O 8 o 0 o * Features Power dissipation PCM : 0.3 W (Tamp.= 25 C) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -50 V .014(0.35) .006(0.15) .087(2.20) .079(2.00) .053(1.35) .045(1.15) .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O O C1 B2 E2 .043(1.10) .035(0.90) Marking : 3C E1 B1 C2 Dimensions in inches and (millimeters) Electrical Characteristics( Tamb=25 C unless otherwise specified) O Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) Test conditions MIN -50 -45 TYP MAX UNIT V V V Ic=-10µA, IE=0 Ic=-10mA, IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 VCE=-5V, IC=-2mA IC=-10mA, IB=-0.5mA I C=-100mA, IB=-5mA VCE=-5V, IC=-2mA VCE=-5V, IC=-10mA V CE=-5V, IC=-10mA , f=100MHz VCB=-10V, IE=0, f=1MHz -5 -15 nA 125 630 -0.3 -0.65 V V V V MHz pF dB Collector-emitter saturation voltage VCE(sat) VBE Base-emitter voltage VBE(1) Transition frequency Collector output capacitance Noise figure -0.6 -0.75 -0.82 200 3.5 2.5 fT Cob NF VCE=-5V, IC=-0.2mA F=1kHZ, RS=2KΩ ,BW=200HZ Note: 1 Short duration test pulse used to minimize self-heating effect. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 1 of 2 BC857S Elektronische Bauelemente PNP Silicon Multi-Chip Transistor 250 (see Note 1) 1000 TA = 150° C VCE = -5V Pd, POWER DISSIPATION (mW) 200 hFE, DC CURRENT GAIN 100 TA = 25° C TA = -50° C 150 100 10 50 0 0 100 TA, AMBIENT TEMPERATURE (° C) Fig. 1, Power Derating Curve 0.5 VCE, COLLECTOR SATURATION VOLTAGE (V) 1 200 1 10 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs Collector Current 100 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) IC / IB = 20 TA = 25° C 0.4 0.3 VCE = -5V 100 0.2 TA = 150° C 0.1 TA = 25° C 0 0.1 1 TA = -50° C 10 10 100 1000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Saturation Voltage vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 2 of 2