BC858B

Elektronische Bauelemente FEA TURES n BC856A, B BC857A, B, C BC858A, B, C SOT-23 A L Top View 3 A suffix of "-C" specifies halogen & lead-free General Purpose Transistor PNP Type Collect current : - 0.1A Operating Temp. : -55 C ~ +150 C O O Dim A BS Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 n n B C D G H n R o H S c o m p lia n t p r o d u c t V 3 1 2 1 2 C OLLE C T OR G C D H K J 3 1 B AS E J K L S V 2 E MITTE R All Dimension in mm ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Tamb=25 unless Symbol otherwise Test specified MIN -80 MAX UNIT conditions BC856 BC857 BC858 VCBO Ic= -10 A I E=0 -50 -30 -65 V Collector-emitter breakdown voltage BC856 BC857 BC858 VCEO Ic= -10 mA IB=0 -45 -30 V Emitter-base breakdown voltage Collector cut-off current BC856 BC857 BC858 Collector cut-off current BC856 BC857 BC858 Emitter cut-off current DC current gain BC856A,857A,858A BC856B,857B,858B BC857C,BC858C Collector-emitter saturation voltage Base-emitter saturation voltage VEBO IE= -10 A IC=0 IE=0 IE=0 IE=0 IB=0 IB=0 IB=0 IC=0 -5 V VCB= -70 V , ICBO VCB= -45 V , VCB= -25 V , VCE= -60 V , ICEO VCE= -40 V , VCE= -25 V , IEBO V EB= -5 V , -0.1 A -0.1 A -0.1 125 250 475 800 -0.5 -1.1 A HFE 1 VCE= -5V, IC= -2mA 220 420 VCE(sat) VBE(sat) IC=-100mA, IB= -5 mA IC= -100 mA, IB= -5mA VCE= -5 V, IC= -10mA 100 V V Transition frequency fT f=100MHz MHz DEVICE MARKING BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 1 of 3 Elektronische Bauelemente BC856A, B BC857A, B, C BC858A, B, C BC857, BC858 −1.0 Typical Characteristics 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = −10 V TA = 25°C −0.9 −0.8 V, VOLTAGE (VOLTS) −0.7 −0.6 −0.5 −0.4 −0.3 −0.2 −0.1 TA = 25°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = −10 V 0.3 0.2 −0.2 VCE(sat) @ IC/IB = 10 −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mAdc) −50 −100 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 IC, COLLECTOR CURRENT (mAdc) −100 −200 0 −0.1 −0.2 Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) −2.0 TA = 25°C −1.6 −1.2 IC = −10 mA IC = −50 mA IC = −20 mA IC = −200 mA IC = −100 mA 1.0 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 −0.8 −0.4 0 −0.02 −0.1 −1.0 IB, BASE CURRENT (mA) −10 −20 −0.2 −10 −1.0 IC, COLLECTOR CURRENT (mA) −100 Figure 3. Collector Saturation Region f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Figure 4. Base-Emitter Temperature Coefficient 10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25°C 400 300 200 150 100 80 60 40 30 20 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VCE = −10 V TA = 25°C 3.0 2.0 1.0 −0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances http://www.SeCoSGmbH.com Figure 6. Current-Gain - Bandwidth Product Any changing of specification will not be informed individual 01-Jun-2004 Rev. B Page 2 of 3 Elektronische Bauelemente BC856A, B BC857A, B, C BC858A, B, C BC856 −1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = −5.0 V TA = 25°C 2.0 1.0 0.5 0.2 −0.1 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) V, VOLTAGE (VOLTS) TJ = 25°C −0.8 VBE(sat) @ IC/IB = 10 −0.6 VBE @ VCE = −5.0 V −0.4 −0.2 VCE(sat) @ IC/IB = 10 0 −0.2 −0.5 −50 −100 −200 −5.0 −10 −20 −1.0 −2.0 IC, COLLECTOR CURRENT (mA) Figure 7. DC Current Gain Figure 8. “On” Voltage VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) θVB, TEMPERATURE COEFFICIENT (mV/ °C) −2.0 −1.0 −1.6 IC = −10 mA −20 mA −50 mA −100 mA −200 mA −1.4 −1.2 −1.8 θVB for VBE −55°C to 125°C −0.8 −2.2 −0.4 TJ = 25°C 0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 IB, BASE CURRENT (mA) −5.0 −10 −20 −2.6 −3.0 −0.2 −0.5 −1.0 −50 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −100 −200 Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient f T, CURRENT−GAIN − BANDWIDTH PRODUCT 40 TJ = 25°C C, CAPACITANCE (pF) 20 Cib 500 VCE = −5.0 V 200 100 50 20 −100 −1.0 −10 IC, COLLECTOR CURRENT (mA) 10 8.0 6.0 4.0 2.0 −0.1 −0.2 Cob −0.5 −5.0 −10 −20 −1.0 −2.0 VR, REVERSE VOLTAGE (VOLTS) −50 −100 Figure 11. Capacitance http://www.SeCoSGmbH.com Figure 12. Current-Gain - Bandwidth Product Any changing of specification will not be informed individual 01-Jun-2004 Rev.B Page 3 of 3