BCP1213

BCP1213 Elektronische Bauelemente PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES The BCP1213 is designed for using in power amplifier applications or power switching applications. SOT-89 A E C MARKING Type Name B D F G H K REF. G H J K L NY hFE Ranking REF. A B C D E F Millimeter J Min. Max. 4.40 4.60 4.05 4.25 1.40 1.60 2.40 2.60 1.50 1.70 0.89 1.20 L Millimeter Min. Max. 1.50 REF. 3.00 REF. 0.40 0.52 0.35 0.41 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC IB PC (Note 1) TJ, TSTG Ratings -50 -50 -5 -2 -0.4 500 1000 150, -55~150 Unit V V V A A mW mW °C 2 Note 1: Mounted on ceramic substrate (250mm x0.8t) ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain. Base-emitter voltage Collector-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Symbol V(BR)CEO ICBO IEBO hFE(1) hFE(2) VBE(sat) VCE(sat) fT COB tON tSTG tF Min. -50 70 20 - Max. -100 -100 240 -1.2 -0.5 120 TYP. 40 0.1 1.0 0.1 Unit V nA nA Test Conditions IC = -10 mA, IB = 0 VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = -0.5 A VCE = -2 V, IC = -2.0 A IC = -1 A, IB = -0.05 A IC = -1 A, IB = -0.05 A VCE = -2 V, IC = -0.5 A VCB = -10 V, IE = 0, f = 1 MHz V V MHz pF μs μs μs CLASSIFICATION OF hFE Rank hFE O 70 – 140 Y 120 - 240 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2004 Rev. A Page 1 of 2 BCP1213 Elektronische Bauelemente PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2004 Rev. A Page 2 of 2