BCP156

BCP156 Elektronische Bauelemente NPN Silicon Planar High Performance Transistor RoHS Compliant Product Description The BCP156 is designed for general purpose switching and amplifier applications. SOT-89 Features * 3 Amp Continuous Current * 60 Volt VCEO * Low Saturation Voltage REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings at TA=25 C Symbol VCBO VCEO VE BO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Junction and Storage Temperature o o Parameter Value 80 60 5 3 6 1.2 -55~+150 Units V V V A W O IC PD TJ,Tstg C ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage 0.12 0.43 *VBE (sat) 0.9 Base-Emitter Saturation Voltage *VBE (on) 0.8 *hFE1 70 200 *hFE2 100 200 DC Current Gain *hFE3 80 170 80 40 *hFE4 Gain-Bandwidth Product 175 fT 140 Output Capacitance Cob Time-On 45 ton Time-Off toff 800 * Measured under pulse condition. Pu l s e w i dt h≦300µs , Du t y Cy c l e≦2% Spice parameter data is available upon request for this device. http://www.SeCoSGmbH.com Symbol BVCBO *BVCEO BVEBO I CBO I E BO *VCE(sat)1 *VCE(sat)2 Min 80 60 5 - Typ. - Max 100 100 0.3 0.6 1.25 1 300 30 - Unit V V V nA nA V V V V Test Conditions I C=100 µA,IE=0 I C=10 mA,IB=0 I E=100 µA,IC=0 VCB= 6 0V,IE=0 VEB=4V,IC=0 I C=1 A,IB=0.1A I C=3 A,IB=0.3A I C=1 A,IB=0.1A I C=1 A,VCE=2V VCE= 2 V, I C=50mA VCE= 2 V, I C=500mA VCE= 2 V, I C=1A VCE= 2 V, I C=2 A VCE= 5 V, IC= 100m A,f=100MHz VCB=10V , f=1MHz VCC= 10V,IC=500mA,IB1=IB2=50mA MH z pF ns Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BCP156 Elektronische Bauelemente NPN Silicon Planar High Performance Transistor Characteristics Curve Collector Curr ent ( A) Collector Curr ent ( A) Collector Curr ent ( A) Collector Curr ent ( A) Collector Emitt er Voltage (V) Collector Curr ent ( A) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2