BCP157

BCP157 Elektronische Bauelemente RoHS Compliant Product PNP Silicon Medium Power Transistor Features 1. -60Volt V CEO 2. 3 Amp continuous current 3. Low saturation voltage SOT-89 1.BASE 2.COLLECTOR 3.EMITTER D D1 A ° Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits -80 -60 -5 -3 -6 0.5 Total power dissipation PC 2 Junction temperature Storage temperature Tj Tstg 150 −55~+150 W ∗2 E1 b1 Unit V b C V V A(DC) A(Pulse)∗1 W L e e1 Symbol A b b1 c D D1 E E1 Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min E Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 °C °C e e1 L ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. ° Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol BVCBO BVCEO BVEBO ICBO IEBO Min. -80 -60 -5 − − − − − − 100 Typ. − − − − − -150 -450 Max. − − − 0.1 0.1 -300 -600 Unit V V V µA µA mV mV Conditions IC=−100µA, IE=0 IC=−10mA, IB=0 IE=−100 µA, IC=0 VCB=−60V, IE=0 VEB=−4V, IC=0 IC=−1A,IB=-100mA IC=-3A,IB=-300mA Collector-emitter saturation voltage 1 VCE(sat)1 Collector-emitter saturation voltage 2 VCE(Sat)2 Base-emitter saturation voltage Sat Base-emitter saturation voltage On VBE(Sat) VBE(On) Cob fT -0.9 -0.8 − 140 40 450 200 200 170 150 -1.25 -1.0 30 V V pF MHz IC=-1A, IB=-100mA VCE=-2V, IC=-1A VCB=−10V, IE=0A, f=1MHz VCE=−5V, IC=-100mA, f=100MHz Output capacitance Current Gain - Bandwidth Product − − − Switching Time ton toff hFE1 hFE2 − − 70 100 80 40 ns VCC=-10V, IC=-500mA, IB1=IB2=-50mA VCE=-2V, IC=-50mA 300 VCE=-2V, IC=-500mA VCE=-2V, IC=-1A =-1 VCE=-2V, IC=-2A Current Gain hFE3 hFE4 Note: Measured under pulse condition. Pulse width