BCP194

BCP194 Elektronische Bauelemente NPN Silicon Planar Medium Power Transistor RoHS Compliant Product Description The BCP194 is designed for medium power amplifier applications. SOT-89 Features * 1 Amp Continuous Current * 60 Volt VCEO * Complementary to BCP195 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings at TA=25 C Symbol VCBO VCEO VE BO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Total Power Dissipation Junction and Storage Temperature o o Parameter Value 80 60 5 1 2 200 1 -55~+150 Units V V V A mA W O IC IB PD TJ,Tstg C ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Typ. Symbol Min 80 B V CBO * B VC E O Collector-Emitter Breakdown Voltage 60 B V EBO Emitter-Base Breakdown Voltage 5 Collector-Base Cutoff Current I CBO Emitter-Base Cutoff Current I CES Emitter-Base Cutoff Current I E BO *VCE(sat)1 Collector Saturation Voltage *VCE(sat)2 *VBE (sat) Base-Emitter Saturation Voltage *VBE (on) *hFE1 100 *hFE2 100 DC Current Gain *hFE3 80 30 *hFE4 Gain-Bandwidth Product fT 150 Output Capacitance Cob * Measured under pulse condition. Pu l s e w i dt h≦300µs , Du t y Cy c l e≦2% Parameter Collector-B a se Breakdown Voltage http://www.SeCoSGmbH.com Max 100 100 100 0.25 0.5 1.1 1 300 10 U n it V V V nA nA nA V V V V Test Conditions I C=100 µA,IE=0 I C=10 mA,IB=0 I E=100 µA,IC=0 VCB= 6 0V,IE=0 VCES=60V VEB=4V, IC=0 I C=500m A,IB=50mA I C=1 A,IB=100mA I C=1 A,IB=100mA I C=1 A,VCE=5V VCE= 5 V, I C=1mA VCE= 5 V, I C=500mA VCE= 5 V, I C=1A VCE= 5 V, I C=2 A VCE= 10V, IC=50m A,f=100MHz VCB=10V , f=1MHz,IE=0 MH z pF Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BCP194 Elektronische Bauelemente NPN Silicon Planar Medium Power Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2