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BCP2098

BCP2098

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    BCP2098 - Epitaxial Planar Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
BCP2098 数据手册
BCP2098 Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The BCP2098 is an epitaxial planar type NPN silicon transistor. SOT-89 4 1 A E FEATURES   2 3 C Excellent DC Current Gain Characteristics Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC / IB=4A / 0.1A B F G H D CLASSIFICATION OF hFE (1) Product-Rank Range BCP2098-Q 120~270 BCP2098-R 180~390 REF. A B C D E F K J L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 PACKAGE INFORMATION Package SOT-89 MPQ 1K Leader Size 13’ inch Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current (Pulse) 1 Total Power Dissipation Junction & Storage temperature Symbol VCBO VCEO VEBO IC ICP PD TJ, TSTG Ratings 50 20 6 5 10 0.5(2.0) 2 Unit V V V A A W °C -55~150 Note: 1. Single pulse, PW=10ms. 2. When mounted on a 40*40*0.7mm ceramic board. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameters Collector-base breakdown voltage Collector-emitter breakdown Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage1 Transition frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT COB Min. 50 20 6 120 - Typ. 0.25 150 30 Max. 0.5 0.5 390 1 - Unit V V V μA μA V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A IC=4A, IB=0.1A VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz Note: 1. Measured under pulse condition. Pulse width≦300s, Duty Cycle≦2%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-May-2011 Rev. B Page 1 of 2 BCP2098 Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 19-May-2011 Rev. B Page 2 of 2
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