BCP4672

BCP4672 Elektronische Bauelemente 2A, 60V NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  The BCP4672 is designed for low frequency amplifier applications. SOT-89 4 MARKING 4672  A 12 3 C Date Code E B D F G H J K L CLASSIFICATION OF hFE Product Rank Range BCP4672-A 120~240 BCP4672-B 200~400 REF. PACKAGE INFORMATION Package SOT-89 MPQ 1K LeaderSize 7’ inch A B C D E F Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 1.2 0.89 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Ratings 60 50 6 2 5 2 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat)* hFE* fT Cob Min. 60 50 6 120 - Typ. 0.1 210 25 Max. 100 100 0.35 400 - Unit V V V Test Conditions IC= 50A, IE=0 IC= 1mA, IB=0 IE= 50A, IC=0 VCB= 60V, IE=0 VEB= 5V, IC=0 IC= -1A, IB= 50mA VCE= 2V, IC= 500mA VCE= 2V, IC= 500mA, f=100MHz VCB= 10V, IE=0, f=1MHz nA nA V MHz pF *Measured under pulse condition. Pulse width≦380μs, Duty Cycle≦2%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Dec-2010 Rev. B Page 1 of 2 BCP4672 Elektronische Bauelemente 2A, 60V NPN Epitaxial Silicon Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Dec-2010 Rev. B Page 2 of 2