BCP53

BCP53 Elektronische Bauelemente -1A , -100V PNP Silicon Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   Collector-Emitter Voltage:VCEO= -80V Complementary types: BCP56 (NPN) A M SOT-223 CLASSIFICATION OF hFE (2) Product-Rank Range BCP53-10 63~160 BCP53-16 100~250 4 Top View CB 1 2 3 K E L D PACKAGE INFORMATION Package SOT-223 MPQ 2.5K LeaderSize 13’ inch REF. A B C D E F F G H J Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Symbol VCBO VCEO VEBO IC PD Tj Ratings -100 -80 -5 -1 1.5 150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain1 Collector-emitter saturation voltage1 Base-emitter voltage1 Transition frequency Note: 1. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE (1) hFE (2) hFE (3) VCE(sat) VBE(on) fT Min. -100 -80 -5 Max. Unit V V V nA Test Conditions IC= -0.1mA , IE=0 IC= -1mA, IB=0 IE= -10μA, IC=0 VCB= -30V, IE=0 VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA VCE= -2V, IC= -500mA IC= -500mA, IB= -50mA VCE= -2V, IC= -500mA VCE= -5V, IC= -10mA, f=100MHZ -100 63 63 40 250 -0.5 -1 100 V V MHz Pulse Test: Pulse Width≦380us, Duty Cycle≦2%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Jan-2011 Rev. B Page 1 of 2 BCP53 Elektronische Bauelemente -1A , -100V PNP Silicon Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 25-Jan-2011 Rev. B Page 2 of 2