BCP5551

BCP5551 Elektronische Bauelemente RoHS Compliant Product NPN Epitaxial Planar Transistor SOT-89 Features Designed for gereral prupose application requiring high breakdown voltage. 1 2 3 1.BASE 2.COLLECTOR 3.EMITTER REF. Mar king: 5551 XXXX (xxxx = Date Code) A B C D E F Min. 4.4 4.05 1.50 1.30 2.40 0.89 Max. 4.6 4.25 1.70 1.50 2.60 1.20 REF. G H I J K L M Min. Max. 3.00 RE F. 1.50 RE F. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 RE F. ABSOLUTE MAXIMUM RATINGS (Tamb =25 o C, unless otherwise specified) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction and Storage Temperature Parameter Symbol VCBO VCEO VEBO IC PD TJ,TSTG 180 160 6 600 1.2 -55 ~ +150 Value Unit V V V mA W o C ELECTRICAL CHARACTERISTICS (Tamb =25 o C ) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Output Capacitance Base-Emitter Voltage DC Current Gain Transition Frequency Parameter Symbol BVCBO BV C E O BVEBO I CBO I EBO VCE(sat)1 VCE(sat) 2 Cob VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Min. 180 160 6 80 80 30 100 Typ. Max. 50 50 150 200 6 1 1 250 300 Unit V V V nA nA mV mV pF V V MHz IC= 1 0 0µ A I C= 1 m A I E= 1 0µ A V CB= 1 2 0 V V EB= 4 V I C = 1 0 m A , I B= 1 m A IC = 50mA, I B = 5mA V CB= 1 0 V , f = 1 M H z I C= 1 0 m A , I B = 1 m A I C= 5 0 m A , I B = 5 m A V C E = 5 V , IC = 1 m A V C E = 5 V , IC = 1 0 m A V C E = 5 V , IC = 5 0 m A VCE= 10V,I C= 10mA, f=100MHz Test Conditions http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BCP5551 Elektronische Bauelemente NPN Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2