BCP5551
Elektronische Bauelemente
RoHS Compliant Product
NPN Epitaxial Planar Transistor
SOT-89
Features
Designed for gereral prupose application requiring high breakdown voltage.
1
2
3
1.BASE 2.COLLECTOR 3.EMITTER
REF.
Mar king: 5551 XXXX (xxxx = Date Code)
A B C D E F
Min. 4.4 4.05 1.50 1.30 2.40 0.89
Max. 4.6 4.25 1.70 1.50 2.60 1.20
REF.
G H I J K L M
Min. Max. 3.00 RE F. 1.50 RE F. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 RE F.
ABSOLUTE MAXIMUM RATINGS (Tamb =25 o C, unless otherwise specified)
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction and Storage Temperature
Parameter
Symbol
VCBO VCEO VEBO IC PD TJ,TSTG
180 160 6 600 1.2 -55 ~ +150
Value
Unit
V V V mA W o C
ELECTRICAL CHARACTERISTICS (Tamb =25 o C )
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Output Capacitance Base-Emitter Voltage DC Current Gain Transition Frequency
Parameter
Symbol
BVCBO BV C E O BVEBO I CBO I EBO VCE(sat)1 VCE(sat) 2 Cob VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT
Min.
180 160 6 80 80 30 100
Typ. Max.
50 50 150 200 6 1 1 250 300
Unit
V V V nA nA mV mV pF V V
MHz
IC= 1 0 0µ A I C= 1 m A I E= 1 0µ A V CB= 1 2 0 V V EB= 4 V I C = 1 0 m A , I B= 1 m A IC = 50mA, I B = 5mA V CB= 1 0 V , f = 1 M H z I C= 1 0 m A , I B = 1 m A I C= 5 0 m A , I B = 5 m A V C E = 5 V , IC = 1 m A V C E = 5 V , IC = 1 0 m A V C E = 5 V , IC = 5 0 m A VCE= 10V,I C= 10mA, f=100MHz
Test Conditions
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
BCP5551
Elektronische Bauelemente
NPN Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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