BCP56

BCP56 Elektronische Bauelemente 1A , 100V NPN Silicon Medium Power Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOT-223 A M 4 For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP53 (PNP) CLASSIFICATION OF hFE(2) Product-Rank Range BCP56-16 100~250 Top View CB 1 2 3 K E L D PACKAGE INFORMATION Package SOT-223 MPQ 2.5K Leader Size 13’ inch F G H J REF. A B C D E F Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Storage Temperature Symbol VCBO VCEO VEBO IC PD TSTG Ratings 100 80 5 1 1.5 -65~+150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain1 Collector-emitter saturation voltage1 Base-emitter voltage1 Transition frequency Note: 1. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE (1) hFE (2) hFE (3) VCE(sat) VBE(on) fT Min. 100 80 5 Max. Unit V V V nA Test Conditions IC=0.1mA , IE=0 IC= 1mA, IB=0 IE= 10μA, IC=0 VCB= 30V, IE=0 VCE= 2V, IC= 5mA VCE= 2V, IC= 150mA VCE= 2V, IC= 500mA IC=500mA, IB= 50mA VCE= 2V, IC= 500mA VCE= 5V, IC= 10mA 100 63 63 40 250 0.5 1 100 V V MHz Pulse Test: Pulse Width≦380us, Duty Cycle≦2%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-May-2011 Rev. D Page 1 of 2 BCP56 Elektronische Bauelemente 1A , 100V NPN Silicon Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-May-2011 Rev. D Page 2 of 2