BCP69

BCP69 Elektronische Bauelemente RoHS Compliant Product PNP Transistor Silicon Epitaxial Transistor SOT-223 Description The BCP69 is designed for guse in low voltage and medium power applications. Features * VCEO : -20V * IC : 1A REF. A C D E I H Date Code BCP69 B C E Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0C 10 C 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 T YP. C 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified) Symbol VCBO VCEO VE BO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature Parameter Value - 25 - 20 -5 -1 1.5 -65~-150 Units V V V A W O o IC PD TJ,Tstg C ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-B a se Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base-Emitter Voltage DC Current Gain Gain-Bandwidth Product o Symbol B V CBO BVC E O B V EBO I CBO I EBO *VCE(sat)1 *VBE(on) *hFE1 *hFE2 *hFE3 fT Min - 25 - 20 -5 50 85 60 - Typ. 60 Max - 10 - 10 - 500 - 1.0 375 - Uni V V V uA uA mV Test Conditions I C=-100µA, I E=0 I C=-1 mA, I B=0 I E=-10 µA, IC=0 VCB= - 25V, I E=0 VEB=-5V, IC=0 I C=-1mA, I B=-100mA V VCE=-1V, I C=-1A VCE =-10V , I C=-5 mA VCE=-1V, I C=-500mA VCE=-1V, I C=-1A MH z VCE=- 5V, IC=-10 mA *Pulse Test: Pulse Width 380 s, Duty Cycle 2% http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BCP69 Elektronische Bauelemente PNP Transistor Silicon Epitaxial Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2