BCP772

BCP772 Elektronische Bauelemente RoHS Compliant Product PNP Epitaxial Planar General Purpose Transistor SOT-89 Description The BCP772 is designed for using in output stage of amplifier, voltage regulator, DC-DC converter and relay driver. REF. A B C D E F o Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings at TA=25 C (unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current Total Power Dissipation (TC=25 oC ) Operating Junction and Storage Temperature Range Symbo l VCBO VC EO VE BO IC PD Tj, Tstg Ratings -40 -30 Unit V V V A o -5 . -3 1.2 -55~+150 W C ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-B ase Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Satruation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance o Symbol B V CBO B VC E O B V EBO I CBO I E BO VCE(sat) VB E(sat) h FE1 h FE2 fT Cob Min -40 -30 -5 30 100 - Typ. -0.3 -1 160 80 55 Max - U n it V V V uA uA V Test Conditions I C=-100 µA I C=-1 mA I E=-10 µA VCB=-3 0V VB E=-3 V I C=- 2 A,IB=-0.2A I C=- 2A,IB=- 0.2A VCE=-2 V, I C=- 20mA VCE=-2 V, I C=- 1 A -1 -1 -0.5 -2 500 - V MH z pF VCE=-5V, IC=- 20mA,f=100MHz VCB=-10 V , f=1MHz Classification of hFE2 Rank Range http://www.SeCoSGmbH.com/ Q 100~200 P 160~320 E 250~500 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BCP772 Elektronische Bauelemente PNP Epitaxial Planar General Purpose Transistor Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2