BCP869

BCP869 Elektronische Bauelemente PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES The BCP869 is designed for application required for high current (maximum -1 A) and low voltage (maximum -20 V). PACKAGE DIMENSIONS SOT-89 A C D M REF. A B C D E F I H G L Millimeter Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. E B ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction & Storage temperature F J K Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -32 -20 -5 -1 0.5 150, -55~150 Unit V V V A W °C PNP ELECTRICAL CHARACTERISTICS at Ta = 25°C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Base-emitter voltage Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VBE VCE(sat) fT Min. -32 -20 -5 50 100 60 40 Max. -0.1 -0.1 375 -1 -0.5 - Unit V V V μA μA Test Conditions IC=-0.1mA, IE=0 IC= -1mA, IB=0 IE=-0.1mA, IC=0 VCB=-25V, IE=0 VEB=-5 V, IC=0 VCE=-10V, IC= -5mA VCE=-1V, IC= -500mA VCE=-1V, IC= -1A VCE=-1V, IC= -1A IC=-1A, IB= -100mA VCE=-5V, IC=-10mA, f = 100MHz V V MHz CLASSIFICATION OF hFE2 Rank Range Marking BC869 100 – 375 CEC BC869-16 100 - 250 CGC BC869-25 160 – 375 CHC http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2004 Rev. A Page 1 of 2 BCP869 Elektronische Bauelemente PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 01-June-2004 Rev. A Page 2 of 2