BCP882

BCP882 Elektronische Bauelemente RoHS Compliant Product NPN Silicon Epitaxial Planar Transistor SOT-89 Description The BCP882 is suited for the output stage of 1.5W audio, voltage regulator, and relay driver. REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings at TA=25 C Symbol VCBO VCEO VE BO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature o o Parameter Value 40 30 5 3 1.2 -55~+150 Units V V V A W O IC PD TJ,Tstg C ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BV CEO BVEBO I CBO I E BO VCE(sat) VBE (sat) hFE1 hFE2 fT Cob Min 40 30 5 30 100 - Typ. 90 45 Max - Unit V V V uA uA V V Test Conditions I C=100 µA,IE=0 I C= 1 mA,IB=0 I E= 10 µA VCB= 3 0V VEB=3V I C=2 A,IB=0.2A I C=2 A,IB=0.2A VCE= 2 V, I C=20mA VCE= 2 V, I C=1 A VCE= 5 V, IC= 0.1 A,f=100MHz VCB=10V , f=1MHz,IE=0 1 1 0.5 2 500 - MH z pF Classification of hFE Rank Range http://www.SeCoSGmbH.com Q 100~200 P 160~320 E 250~500 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BCP882 Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2