BCPA14

BCPA14 Elektronische Bauelemente RoHS Compliant Product NPN Silicon Epitaxial Planar Transistor SOT-89 Description The BCPA14 is a Darlington amplifier transistor designed for applications requiring exremely high current gain. REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings at TA=25 C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current Total Power Dissipation Operating Junction and Storage Temperature Range o Symbo l VCBO VC EO VE BO IC PD Tj, Tstg Ratings 30 30 10 500 1.0 -55~+150 Unit V V V mA W o C ELECTRICAL CHARACTERISTICS (Tamb =25 o C ) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-o ff C urren t Collector Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Voltage, On DC Current Gain DC Current Gain Transition Frequency *Pulse Test: Pulse Width≦380us, Duty Cycle 2% ≦ Parameter Symbol BVCBO BV C E O BVEBO I CBO I CEO Min. 30 30 10 - Typ. Max. - Unit V V V nA nA pF V V 100 100 6 1.5 2.0 - Cob *VCE(sat) *VBE(on) *hFE1 *hFE2 fT 10K 20K 125 IC=100u A, IE=0 IC= 100u A, I B =0 IE=10uA, IC=0 V CB = 3 0 V , I E= 0 VE B= 10V, IC=0 Test Conditions MHz VCB=10V,f=1MHz,IE=0 IC=100mA, IB =0.1mA VCE=5V, IC=100mA VCE= 5 V , I C= 1 0 m A V CE= 5 V , I C= 1 0 0 m A VCE=5V, I C =10mA, f=100MHz http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BCPA14 NPN Silicon Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2