BCPA94

BCPA94 Elektronische Bauelemente -0.5 A, -400 V PNP Silicon Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The BCPA94 is designed for application requires high voltage. SOT-89 FEATURES    High Voltage：VCEO=400V (min) at IC=1mA High Current gain：IC=300mA at 25°C Complementary with BCPA44 MARKING A94  B C E Date Code ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Ratings -400 -400 -6 -0.5 1 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector-emitter current Emitter cut-off current DC current gain * Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO hFE1 hFE2 hFE3 hFE4 VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat) Min. -400 -400 -6 40 50 45 20 - Typ. - Max. -100 -500 -100 300 -350 -500 -750 -750 Unit V V V nA nA nA Test Conditions IC= -100A, IE=0 IC= -1mA, IB=0 IE= -100A, IC=0 VCB= -400V, IE=0 VCE= -400V, VBE=0 VEB= -6V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA IC= -1mA, IB= -0.1mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA Collector-emitter saturation voltage * Base-emitter saturation voltage * mV mV * Pulse Test: Pulse Width ≦ 380μs, Duty Cycle≦2% http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Jun-2010 Rev. B Page 1 of 2 BCPA94 Elektronische Bauelemente -0.5 A, -400 V PNP Silicon Epitaxial Planar Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 11-Jun-2010 Rev. B Page 2 of 2