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BCV27

BCV27

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    BCV27 - NPN Darlington Plastic Encapsulated Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
BCV27 数据手册
BCV27 Elektronische Bauelemente 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 A FEATURES For general AF application high collector current High current gain 1 L 3 3 Top View 2 CB 1 2 K E D Collector 3 F G H J 1 Base REF. A B C D E F 2 Emitter Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current - Peak Collector Power Dissipation Thermal Resistance, Junction to Ambient Air Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC ICM PC RθJA TJ, TSTG RATING 40 30 10 500 800 350 357 150, -65~150 UNIT V V V mA mA mW ° C/W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1* hFE2* hFE3* hFE4* VCE(sat) * VBE(sat) * fT MIN 40 30 10 4000 10000 20000 4000 - TYP 170 3.5 M AX 0.1 0.1 1 1.5 - UNIT V V V µA µA TEST CONDITION IC=100µA, IE = 0A IC=10mA, IB = 0A IE=10µA, IC = 0A VCB=30 V, IE = 0 A VEB=4 V, IC = 0 A VCE=1V, IC=100µA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=500mA DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency V V MHz pF IC=100mA, IB=0.1mA IC=100mA, IB=0.1mA VCE = 5V, IC =50mA, f=100MHz VCB = 10V, f=1MHz Collector Output Capacitance Cob *Pulse test: Pulse width ≦300µS; Ducy Cycle ≦2.0% http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 22-Jan-2010 Rev. A Page 1 of 3 BCV27 Elektronische Bauelemente 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 22-Jan-2010 Rev. A Page 2 of 3 BCV27 Elektronische Bauelemente 40 V, 500mA NPN Darlington Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 22-Jan-2010 Rev. A Page 3 of 3
BCV27 价格&库存

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