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BCW68

BCW68

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    BCW68 - PNP Plastic-Encapsulate Transistors - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
BCW68 数据手册
BCW68 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free PNP Plastic-Encapsulate Transistors SOT-23 A 3 3 FEATURES  L Complementary to BCW66. COLLECTOR Top View 1 2 CB 1 2 3 1 BASE K E D MARKING: BCW68F:DF BCW68G:DG BCW68H:DH F G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 H J REF. REF. G H J K L 2 EMITTER A B C D E F Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Collector Power Dissipation Junction & Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS -60 -45 -5 -0.8 0.33 150, -55~150 UNIT V V V A W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-off Current hFE1 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO BCW68F BCW68G BCW68H BCW68F BCW68G BCW68H BCW68F BCW68G BCW68H BCW68F BCW68G BCW68H VCE(sat) VBE(sat) fT COB CIB MIN. -60 -45 -5 TYP. MAX. UNIT V V V μA μA TEST CONDITIONS IC=-10μA, IE=0 IC=-10mA, IB=0 IE=-10μA, IC=0 VCB=-45V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-0.1mA -0.02 -0.02 35 50 80 75 120 180 100 160 250 35 60 100 hFE2 DC Current Gain hFE3 VCE=-1V, IC=-10mA 250 400 630 VCE=-1V, IC=-100mA hFE4 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Input Capacitance VCE=-2V, IC=-500mA -0.3 -0.7 -1.25 -2 200 6 60 V V V V MHz pF pF IC=-100mA, IB=-10mA IC=-500mA, IB=-50mA IC=-100mA, IB=-10mA IC=-500mA, IB=-50mA VCE=-5V, IC=-50mA,f=20MHz VCB=-10V, IE=0,f=1MHz VEB=-0.5V,IE=0,f=1MHz 27-Oct-2009 Rev. A Page 1 of 3 BCW68 Elektronische Bauelemente PNP Plastic-Encapsulate Transistors CHARACTERISTIC CURVES 27-Oct-2009 Rev. A Page 2 of 3 BCW68 Elektronische Bauelemente PNP Plastic-Encapsulate Transistors CHARACTERISTIC CURVES 27-Oct-2009 Rev. A Page 3 of 3
BCW68 价格&库存

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BCW68GLT1G
  •  国内价格
  • 1+0.16644
  • 30+0.16172
  • 100+0.157
  • 500+0.14755
  • 1000+0.14283
  • 2000+0.14

库存:189

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