Elektronische Bauelemente
NPN Silicon Plastic-Encapsulate Transistor
BCX19
A suffix of "-C" specifies halogen & lead-free
FEATURES
n
SOT-23
3 1
O
Collector
3 1
Power dissipation PCM : 0.225 W (Tamb=25 C) Collector Current ICM : 0.5 A Collector-base voltage
2
Base
n
2
1. 0
Emitter
n
n
n
0. 95
Unit: m i l l i m e t e r
ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified)
o
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Em itter-base breakdown voltage Collector cut-off current Collector cut-off current Em itter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(on )
Test
conditions
MI N 50 45 5
TYP
0. 4
Tj, Tstg : - 55 C ~ + 150 C RoHS Compliant Product
O O
2. 9
1. 9
0. 95
V(BR)CBO : 50 V Operating & storage junction temperature
2. 4 1. 3
MAX
UNIT V V V
Ic= 10µA, IE=0 Ic =10 mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VCE=20V, IB=0 VEB= 5V, IC=0 VCE=1V, IC=100mA IC=500mA, IB= 50m A I C=500mA,VCE=1V
0.1 0.1 10 100 600 0.62 1.2
µA µA µA
V V
MARKING
BCX19 = U1
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 1
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