Elektronische Bauelemente
PNP Transistors Plastic-Encapsulate Transistors
RoHS Compliant Product
BCX51
1
2
3
4.4~4.6 1.4~1.8
SOT-89
1.BASE 2.COLLECTOR
1.4~1.6
Features
Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 0.5 -1 -45
3.EMITTER
3.94~4.25
W (Tamb=25 C) A V
o
0.36~0.56
0.9~1.1
1.5Ref. 2.9~3.1
0.32~0.52
2.3~2.6
0.35~0.44
Dimensision in Millimeter
Operating and storage junction temperature range TJ, Tstg: -55 oC to +150 C ELECTRICAL CHARACTERISTICS (Tamb=25 oC
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
o
unless
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO
otherwise
Test
specified)
MIN -45 -45 -5 -0.1 -0.1 MAX UNIT V V V µA µA
conditions
Ic=-100µA, IE=0 IC= -1mA , IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0
DC current gain
BCX51 BCX51-10 BCX51-16
hFE(1)
VCE=-2V, IC=-150mA
63 63 100 63 40
250 160 250
hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(ON)
VCE=-2V, IC=- 5mA VCE=-2V, IC=- 500mA IC=-500 mA, IB= -50mA IC= -500 mA, VCE=-2V VCE= -5V, IC=-10mA
-0.5 -1
V V
Transition frequency
fT
f = 100MHz
50
MHz
DEVICE MARKING
BCX51=AA
BCX51-10=AC
BCX51-16=AD
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 1
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