BCX52

Elektronische Bauelemente PNP Transistors Plastic-Encapsulate Transistors RoHS Compliant Product BCX52 1 2 3 4.4~4.6 1.4~1.8 SOT-89 1.BASE 2.COLLECTOR 1.4~1.6 Features Power dissipation PCM: 0.5 Collector current ICM: -1 Collector-base voltage V(BR)CBO: -6 0 3.EMITTER 3.94~4.25 W (Tamb=25oC) A V 0.36~0.56 0.9~1.1 1.5Ref. 2.9~3.1 0.32~0.52 2.3~2.6 0.35~0.44 Dimensision in Millimeter Operating and storage junction tem perature range TJ, Tstg: -55 C to +150oC ELECTRICAL CHARACTERISTICS (Tamb=25 C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Em itter-base breakdown voltage Collector cut-off current Em itter cut-off current o o unless otherwise specified) Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions MI N -60 -60 -5 -0.1 -0.1 MAX UNIT V V V µA µA Ic=-100µA , IE=0 IC=-10mA , IB=0 IE=-10µA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 DC current gain BCX52 BCX52-10 BCX52-16 hFE(1) VCE=-2V, IC=-150mA 63 63 100 63 40 250 160 250 hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(ON) VCE=-2V, IC= -5m A VCE=-2V, IC=-500mA IC=-500 mA, IB=-50mA IC=- 500mA, VCE=-2V VCE= -5V, IC= -10mA -0.5 -1 V V Transition frequency fT f = 100MHz 50 MHz DEVICE MARKING BCX52=AE BCX52-10=AG BCX52-16=AM http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 1