BCX55

Elektronische Bauelemente NPN Transistors Plastic-Encapsulate Transistors RoHS Compliant Product BCX55 1 2 3 4.4~4.6 1.4~1.8 SOT-89 1.BASE 2.COLLECTOR 1.4~1.6 Features Power dissipation PCM: 0.5 Collector current ICM: 1 Collector-base voltage V(BR)CBO: 60 3.EMITTER 3.94~4.25 W (Tamb=25oC) A V 0.36~0.56 0.9~1.1 1.5Ref. 2.9~3.1 0.32~0.52 2.3~2.6 0.35~0.44 Dimensision in Millimeter Operating and storage junction tem perature range TJ, Tstg: -55 oC to +150oC ELECTRICAL CHARACTERISTICS (Tamb=25 C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Em itter-base breakdown voltage Collector cut-off current Em itter cut-off current o unless otherwise specified) Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions MI N 60 60 5 0.1 0.1 MAX UNIT V V V µA µA Ic=100µA, IE=0 IC= 10m A , IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=5 V, IC=0 DC current gain BCX55 BCX55-10 BCX55-16 hFE(1) VCE=2V, IC= 150mA 63 63 100 40 25 250 160 250 hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(ON) VCE=2V, IC= 5mA VCE=2V, IC= 500mA IC=500 m A, IB= 50mA IC= 500 mA, VCE=2V VCE= 10V, IC= 50mA 0.5 1 V V Transition frequency fT f = 100MHz 130 MHz DEVICE MARKING http://www.SeCoSGmbH.com BCX55=BE BCX55-10=BG BCX55-16=BM Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 1