BCX56

BCX56 Elektronische Bauelemente NPN Transistors Plastic-Encapsulate Transistors RoHS Compliant Product 1 2 SOT-89 3 4.4~4.6 1.4~1.8 1.4~1.6 1.BASE 2.COLLECTOR Features Power dissipation PCM: Collector current ICM: 3.EMITTER 3.94~4.25 2.3~2.6 0.36~0.56 1.2 1 W (Tamb=25oC) A V 0.9~1.1 1.5Ref. 2.9~3.1 0.32~0.52 0.35~0.44 Collector-base voltage V(BR)CBO: 100 Dimensision in Millimeter Operating and storage junction tem perature range TJ, Tstg: -65 oC to +150 oC Complimentary to BCX53 ELECTRICAL CHARACTERISTICS (Tamb=25 C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Em itter-base breakdown voltage Collector cut-off current Em itter cut-off current DC current gain BCX56 BCX56-10 BCX56-16 o unless otherwise specified) Sym bol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) Test conditions MI N 100 80 5 100 100 63 63 40 100 500 1 MHz mV V 250 MAX UNIT V V V nA nA Ic=100 µA, IE=0 IC= 1 m A , IB=0 IE=10 µ A, IC=0 VCB=30V, IE=0 VEB=5 V, IC=0 VCE=2V, IC= 5mA VCE=2V, IC= 150mA VCE=2V, IC= 500mA VCE= 5 V, IC= 10mA IC=500 m A, IB= 50mA IC= 500 mA, VCE=2V Transition frequency Collector-emitter saturation voltage Base-emitter voltage fT VCE(sat) VBE(ON) Classification of hFE2 Rank Range 10 63 - 160 16 100 - 250 DEVICE MARKING BCP56 xxxx Date Code Any changing of specification will not be informed individual http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Page 1 of 2 Elektronische Bauelemente NPN Transistors Plastic-Encapsulate Transistors BCX56 Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2