BCX70J
Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
SOT-23 FEATURES
A
3
Low Current Low Voltage
Collector
1
L
3
Top View
2
CB
1 2
K
E D
MARKING : AJ
Base
F
G
H
J
REF.
Emitter
A B C D E F
Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50
REF. G H J K L
Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissapation Junction, Storage Temperature
SYMBOL
VCBO VCEO VEBO IC PC TJ, TSTG
RATINGS
45 45 5 200 250 150, -55~150
UNIT
V V V mA mW ℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Collector Output Capacitance Noise Figure Gain-Bandwidth Product
TEST CONDITIONS
IC=10µA, IE =0 IC=2mA, IB =0 IE=1µA, IC =0 VCE=45V, VBE =0 VCE=5V, IC=10µA VCE=5V, IC=2mA VCE=1V, IC=50mA IC =10mA, IB =0.25mA IC =50mA, IB =1.25mA IC=10mA, IB=-0.25mA IC=50mA, IB=1.25mA VCE=5V, IC=2mA VCB=10V, IE =0, f =1MHz VCE=5V,IC=200µA,f=1KHZ, BW=200HZ,RS=2KΩ VCE =5V, IC=10mA,f=100MHz
SYMBOL
V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE1 hFE2 hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE COB NF FT
MIN.
45 45 5
TYP.
MAX.
UNIT
V V V nA
20 30 250 90 0.05 0.1 0.6 0.7 0.55 1.7 6 100 250 460 0.35 0.55 0.85 1.05 0.75
V V V V V pF dB MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Oct-2009 Rev. B
Page 1 of 3
BCX70J
Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Oct-2009 Rev. B
Page 2 of 3
BCX70J
Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
26-Oct-2009 Rev. B
Page 3 of 3