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BD13003B

BD13003B

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    BD13003B - NPN Plastic Encapsulated Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
BD13003B 数据手册
BD13003B Elektronische Bauelemente 1.5A , 700V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power Switching Applications TO-126 CLASSIFICATION OF ts Product-Rank Range Product-Rank Range BD3DD13003-A1 2-2.5 (µs) BD3DD13003-B1 3-3.5 (µs) BD3DD13003-A2 A 2.5-3 (µs) F E B BD3DD13003-B2 3.5-4 (µs) N L M K J H C D Collector G 2 REF. 1 Base 3 Emitter A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 700 400 9 1.5 1.5 150, -55~150 Unit V V V A W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Fall time Storage time http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) fT tf tS Min. 700 400 9 20 5 5 2 Typ. - Max. 1 0.5 1 30 0.6 1.2 0.5 4 Unit V V V mA mA mA Test Conditions IC=5mA, IE=0 IC=10mA, IB=0 IE=2mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=5V, IC=0.5A VCE=5V, IC=1.5A V IC=1A, IB=250mA V IC=1A, IB=250mA MHz VCE=10V, IC=100mA, f =1MHz µs IC=1A,IB1= -IB2=0.2A,VCC=100V µAny changes of specification will not be informed individually. s IC=250mA (UI9600) 23-Jun-2011 Rev. A Page 1 of 2 BD13003B Elektronische Bauelemente 1.5A , 700V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 23-Jun-2011 Rev. A Page 2 of 2
BD13003B 价格&库存

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