BD439

BD439/BD441 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free NPN Type Plastic Encapsulate Transistors TO-126 8.0±0.2 2.0±0.2 4.14±0.1 11.0±0.2 1 2 3 O2.8±0.1 O3.2±0.1 Features * Amplifier and switching applications 3.2±0.2 1.4±0.1 o MAXIMUM RATINGS* TA=25 C unless otherwise noted 1.27±0.1 15.3±0.2 0.76± 0.1 2.28 Typ. Symbol VCBO Paramete Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature BD439 BD441 BD439 BD441 Value 60 80 60 80 5 4 1.25 150 -55-150 Units V V V A W o VCEO 4.55±0.1 0.5± 0.1 VEBO IC PC TJ Tstg 1: Emitter 2: Collector 3: Base C C Dimensions in Millimeters o ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Symbol V(BR)CBO Test unless otherwise specified） MIN TYP MAX UNIT V conditions BD439 BD441 Ic=100μA,IE=0 60 80 60 80 5 Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) Ic=100mA,IB=0 IE=100μA,IC=0 VCB=60V,IE=0 VCB=80V,IE=0 VEB=5V,IE=0 VCE=1V,IC=500mA VCE=5V,IC=10mA VCE=1V,IC=2A IC=3A,IB=0.3A VCE=1V,IC=2A VCE=1V,IC=250mA BD439 BD441 V V BD439 BD441 100 1 40 475 μA mA DC current gain hFE(2) hFE(3) BD439 BD441 BD439 BD441 20 15 25 15 0.8 1.1 3 V V MHz Collector-emitter saturation voltage Base-emitter voltage Transition frequency VCE(sat) VBE fT http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 BD439/BD441 Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors Typical Characteristics BD439，441 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2of 2