BD442

BD438/BD440/BD442 Elektronische Bauelemente PNP Type Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 8.0±0.2 2.0±0.2 4.14±0.1 11.0±0.2 1 2 3 O2.8±0.1 O3.2±0.1 Features * Amplifier and switching applications o TO-126 3.2±0.2 MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage BD438 BD440 BD442 VCEO Collector-Emitter Voltage BD438 BD440 BD442 VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current –Continuous Collector Dissipation Junction Temperature Storage Temperature Value -45 -60 -80 -45 -60 -80 -5 -4 1.25 150 -55-150 V A W 4.55±0.1 Units V 1.4±0.1 1.27±0.1 15.3±0.2 V 0.76±0.1 2.28 Typ. 0.5±0.1 1: Emitter 2: Collector 3: Base Dimensions in Millimeters ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO unless Test otherwise conditions specified) MIN TYP MAX UNIT V IC=-100µA, IE=0 Collector-base breakdown voltage BD438 BD440 BD442 BD438 BD440 BD442 BD438 BD440 BD442 BD438 BD440 BD442 -45 -60 -80 -45 -60 -80 -5 -0.1 -1 30 20 15 85 40 40 25 15 -0.7 -0.8 -1.1 -1.5 3 V V MHz 375 475 V µA µA V Collector-emitter breakdown voltage V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) IC=-100mA, IB=0 Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current IE=-100µA, IC=0 VCB=-45V, IE=0 VCB=-60V, IE=0 VCB=-80V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-10mA DC current gain hFE(2) VCE=-1V, IC=-500mA BD438 BD440/BD442 VCE=-1V, IC=-2A BD438 BD440 BD442 BD438 BD440/BD442 BD438 BD440/BD442 hFE(3) Collector-emitter saturation voltage Base-emitter voltage Transition frequency http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A VCE(sat) VBE fT IC=-3A, IB=-300mA VCE=-1V, IC=-2A VCE=-1V, IC=-250mA, f=1MHz Any changing of specification will not be informed individual Page 1 of 2 BD438/BD440/BD442 Elektronische Bauelemente PNP Type Plastic Encapsulate Transistors Typical Characteristics BD438,440,442 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2of 2