BFS20

BFS20 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor A suffix of "-C" specifies halogen & lead-free FEATURES High Fequency Application. VHF Band Amplifier application RoHS Compliant Product Power dissipation PCM : 0.25 W 3 Collector 3 1 2 1 Base 3 SOT-23 Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 A L 2 Emitter Collector Current 1 Top View 2 BS ICM : 25mA Collector-base voltage V G C D H K J V(BR)CBO : 30 V Operating & storage junction temperature Tj, Tstg : - 55 C ~ + 150 C O O All Dimension in mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(on) unless Test otherwise conditions specified) MIN 30 20 4 0.1 0.1 0.1 40 120 0.3 0.9 275 V V MHz TYP MAX UNIT V V V Ic= 100µA, IE=0 Ic= 100µA, IB=0 IE=100µA, IC=0 VCB=20V, IE=0 VCE=15V, IB=0 VEB=4V, IC=0 VCE=10V, IC= 7mA IC=10 mA, IB=1mA IC=7mA, VCE=10V VCE= 10V, IC=5mA f = 100MHz µA µA µA fT Marking G11 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 1