C1815

C1815 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor SOT-23 A FEATURE Power Dissipation 1 L 3 3 Top View 2 CB 1 2 MARKING: HF 1 Base Collector K E D 3 F G H J 2 Emitter REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC Pc TJ, TSTG RATING 60 50 5 150 200 150, -55 ~ 150 UNIT V V V mA mW ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency SYMBOL V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT MIN 60 50 130 80 TYP - M AX 0.1 0.1 0.1 400 0.25 1 - UNIT V V µA µA µA V V MHz TEST CONDITION IC=100µA, IE = 0A IC=0.1mA, IB = 0A VCB=60 V, IE = 0 A VCE=50 V, IB = 0 A VEB=5 V, IC = 0 A VCE=6V, IC=2mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE = 10V, IC = 1 mA, f = 30 MHz CLASSIFICATION OF hFE Rank Range L 130-200 H 200-400 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2009 Rev. A Page 1 of 2 C1815 Elektronische Bauelemente 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2009 Rev. A Page 2 of 2