C945

C945 Elektronische Bauelemente 60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-23 A 3 3 Excellent hFE Linearity Low noise Complementary to A733 1 L Top View 2 CB 1 2 MARKING Product C945 Marking Code CR K E D F G H J PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 Collector  CLASSIFICATION OF hFE(1) Product-Rank Range C945-L 130-200 C945-H 200-400  Base  Emitter MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATINGS 60 50 5 150 200 150, -55~150 UNIT V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition frequency Collector output capacitance Noise figure http://www.SeCoSGmbH.com/ TEST CONDITIONS IC =100µA, IE =0 IC = 1mA, IB =0 IE = 0.1µA, IC =0 VCB = 60V, IE =0 VCE = 55V, R =10mΩ VEB = 5V, IC =0 VCE = 6V, IC = 1mA VCE = 6V, IC = 0.1mA IC = 100mA, IB = 10mA IC = 100mA, IB = 10mA VCE = 6V, IC = 10mA, f=30MHz VCB = 10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kMHz SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICER IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob NF MIN. 60 50 5 130 40 150 - TYP. 4 MAX. 0.1 0.1 0.1 400 0.3 1 3.0 10 UNIT V V V µA µA µA V V MHz pF dB Any changes of specification will not be informed individually. 17-Dec-2010 Rev. A Page 1 of 2 C945 Elektronische Bauelemente 60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 17-Dec-2010 Rev. A Page 2 of 2