CZD1182

CZD1182 PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-252 6. 50 0. 15 0. 10 2. 30 0. 51 0. 05 0. 10 FEATURES The CZD1182 is designed for medium power amplifier application 0. 20 0. 10 5. 30 C Low collector saturation voltage: VCE(sat)=-0.5V (Typ.) RoHS Compliant Product 5 0 . 51 0 0. 10 1. 20 9. 70 0. 75 0. 10 5 5 1. 60 B O C E 0. 51 * MAXIMUM RATINGS* TA=25 C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Current -Pulse,Pw=100mS Collector Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC IC PC TJ, Tstg Value -40 -32 -5 -2 -3 10 +150,-55~+150 Units V V V A A W ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN -40 -32 -5 -1 -1 82 -500 100 50 390 -800 mV MHz pF TYP MAX UNIT V V V uA uA Ic=-50µA, IE=0 Ic= -1mA,IB=0 IE= -50µA, IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-500mA IC=-2000mA,IB=-200mA VCE=-5V,Ic=500mA,f=100MHz VCB=-10V,f=1MHz CLASSIFICATION OF Rank Range hFE P 82 - 180 Q 120 - 270 R 180 - 390 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2006 Rev. A Page 1 of 2 2. 70 MARKING : 1182 (With Date Code) 0. 15 0. 6 0 9 0. 80 0. 10 2. 30 0. 10 0. 60 2. 30 0. 10 0. 10 0. 20 5. 50 0. 10 CZD1182 Elektronische Bauelemente PNP Silicon General Purpose Transistor Electrical characteristic curves 01-Jun-2006 Rev. A Page 2of 2