CZD1386

CZD1386 Elektronische Bauelemente -5 A, -30 V PNP Epitaxial Silicon Transistor DESCRIPTION The CZD1386 is designed for low frequency applications. FEATURES Low VCE(sat) = -0.55V(Typ.) (IC/IB = -4 A/ -0.1 A) Excellent DC current gain characteristics PACKAGE DIMENSIONS REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 Ref. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current *Collector Current (Pulse) Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC IC Pc TJ, TSTG Ratings -30 -20 -6 -5 -10 20 +150, -55 ~ +150 Unit V V V A A W ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -30 -20 -6 82 - Typ. 120 60 Max. -500 -500 -1 580 - Unit V V V nA nA mV MHz pF Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-20V VEB=-5V IC=-4A, IB=-0.1mA VCE=-2V, IC=-0.5mA VCE=-6V, IE=50mA, f=30MHz VCB=-20V, IE=0, f=1MHz * Pulse Test: Pulse Width≦380μs, Duty Cycle≦2% CLASSIFICATION OF hFE1 Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 E 370 - 580 01-June-2002 Rev. A Page 1 of 2 CZD1386 Elektronische Bauelemente -5 A, -30 V PNP Epitaxial Silicon Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 2