CZD1952

CZD195 2 Elektronische Bauelemente RoHS Compliant Product PNP High Speed Switching Transistor TO-252 Description The CZD1952 is designed for high speed switching applications. Features * * * * Wide SOA Low Saturation Voltage,Typically VCE(sat)=-0.2V at IC/IB=-3A/-0.15A High Speed Switching,Typically tf=-0.15us at IC=-3A Complements to CZD5103 REF. A B C D E F S o Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings at TA=25 C (unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current (DC) Collect Current (Pulse) Total Power Dissipation Operating Junction and Storage Temperature Range O Symbo l VCBO VC EO VE BO IC IC o PD (TA =25 C ) o PD (TC =25 C ) Tj, Tstg Ratings -100 -60 Unit V V V A A W o -5 . -5 - 10 1 10 -55~+150 W C ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Voltage, On DC Current Gain DC Current Gain Output Capacitance Transition Frequency Turn-On Time Storage Time Fall Time Pa r a m e t e r Symbol BVCBO BV C E O BVEBO I CES I EBO *VCE(sat)1 *VCE(sat)2 *VBE(on)1 *VBE(on)2 *hFE1 *hFE2 Cob fT ton tstg tf Min. -100 -60 -5 120 40 - Typ. Max. - 10 -10 -0.3 -0.5 -1.2 -1.5 320 0.3 1.5 0.3 Unit V V V uA uA V V V V 130 80 - pF MHz uS IC=-50 uA, IE=0 I C = - 1 m A , IB = 0 I E= - 5 0 u A , I C= 0 VCE=-100 V, V EB=0 VEB=-5V, IC=0 IC= -3 A, IB= -0.15A IC= -4A, IB= -0.2A IC= -3 A, IB= -0.15A IC= -4A, IB= -0.2A VCE=-2V, IC=-1A VCE=-2V, IC= -3 A VCB=-10V,IE=0,f=1MHz VCE=- 0V, IE=0.5A,f=30MHz 1 IC=-3A,RL=10Ω IB1=-IB2=-0.15A VCC=-30V Test Cond itions *Measure using pulse current http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Feb-2008 Rev. B Page 1 of 2 CZD 195 2 Elektronische Bauelemente PNP High Sp eed Swit ching Transistor Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Feb-2008 Rev. B Page 2 of 2