ES12M

ES11M~ES15M Elektronische Bauelemente 50 ~ 600 V 1.0 Amp Surface Mount Efficient Fast Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen-free and RoHS Compliant DESCRIPTIONS Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Small plastic SMD package. tRR less than 25nS for high efficiency Low forward drop down voltage High surge and high current capability. Superfast recovery time for switching mode application. Glass-passivated chip junction. SOD-123M A B F D C PACKAGING INFORMATION Case: Molded plastic Epoxy: UL94-V0 rate flame retardant Weight: 0.0270 g (approximately) MARKING CODE Part Number ES11M ES12M ES13M Marking Code E1 E2 E3 Part Number ES14M ES15M Marking Code E4 E5 REF. A B C Millimeter Min. Max. 3.50 3.90 1.40 1.80 1.30 1.70 E E REF. D E F Millimeter Min. Max. 3.60 (MAX.) 0.80 (TYP.) 0.30 (TYP.) ELECTRICAL CHARACTERISTICS AND RATINGS (TA = 25°C unless otherwise specified.) PARAMETERS Recurrent Peak Reverse Voltage (Max.) RMS Voltage (Max.) Reverse Voltage (Max.) Forward Voltage (Max.) Average Forward Rectified Current (Max.) SYMBOL ES11M PART NUMBERS ES12M ES13M ES14M ES15M UNITS TESTING CONDITIONS VRRM VRMS VR VF IO 50 35 50 100 70 100 0.875 200 140 200 400 280 400 1.25 600 420 600 1.75 V V V V A IF = 1A Ambient temperature = 55°C 8.3ms single half sine-wave superimposed on rated load (JEDEC method) 1.0 Peak Forward Surge Current IFSM 30 5.0 100 25 15 -65 ~ 175, -55 to 150 A DC Reverse Current at Rated DC Blocking Voltage (Max.) Reverse Recovery Time Junction Capacitance (Typ.) Storage and Operating Temperature Range IR tRR CJ TSTG, TJ μA nS pF °C VR=VRRM, TA=25°C VR=VRRM, TA=125°C f=1MHz and applied 4V DC reverse voltage 01-December-2008 Rev. A Page 1 of 2 ES11M~ES15M Elektronische Bauelemente 50 ~ 600 V 1.0 Amp Surface Mount Efficient Fast Rectifiers RATINGS AND CHARACTERISTIC CURVES FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 0.375"(9.5mm) Lead Length FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 10 INSTANTANEOUS FORWARD CURRENT,(A) ES11M ~ ES13M 1 ES14M T j =25°C 25 50 75 100 125 150 175 0.1 ES15M AMBIENT TEMPERATURE ( C) pulse width =300μ S 1% duty cycle 0 .01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 30 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) FORWARD VOLTAGE,(V) 25 FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE 20 TJ=25 C 8.3ms Single Half Sine Wave JEDEC method 15 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 10 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 40 trr +0.5A | | | | | | | | JUNCTION CAPACITANCE,(pF) 30 25 20 15 10 5 0 -0.25A -1.0A 1cm SET TIME BASE FOR 10 / 20ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) 01-December-2008 Rev. A Page 2 of 2