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KS05B3

KS05B3

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    KS05B3 - 40 W Transient Voltage Suppressors Diode - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
KS05B3 数据手册
KS05B3 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free VOLTAGE: 5.0 V 40 W Transient Voltage Suppressors Diode . Designed to protect voltage sensitive components from ESD. . Excellent clamping capability, low leakage and fast response. . Cellular phones, MP3 players, digital cameras ... etc. . Suitable for electronics where board space is a major design consideration. DESCRIPTION SOT -143 .075(1.90) Ref .023Re f (0.57)Re f .018(0.45) .014(0.35) .033(0.84) .030(0.76) .100(2.55) .089(2.25) .055(1.40) .047(1.20) 10 o 0 o . . Response time is typically < 1 ns . Low leakage . Stand-off voltage:5.0V . IEC61000-4-2 level 4 ESD protection . Ulta Low Capacitance : 22pF FEATURES (0.40)Ref .016 Ref .071(1.80) .063(1.60) .118(3.00) .110(2.80) .006(0.16) .003(0.08) .004(0.10) .000(0.00) .043(1.10) .035(0.90) .051(1.30) .039(1.00) Dimensions in inches and (millimeters) 4 3 1 2 Rating 25 C ambient temperature unless otherwise specified. o MAXIMUM RATINGS IEC61000-4-2, Level 4(ESD) TYPE NUMBER Pack Pulse power tp=8/20us Pack Pulse Current tp=8/20us Lead Solder Temperature - Max. (10 sec duration) Thermal Resistance Junction-to-ambient Junction and Storage Temperature Range Total Power Dissipation on FR-5 board (Note 2) Air Contact SYMBOL Ppp Ipp TL R θJA TJ , TSTG PD LIMITS >30 >20 40 2.0 260 430 -55 ~ +150 150 UNITS kV W A o C C/W C mW o o Stresses exceeding "Maximum Ratings" may damage the device. "Maximum Ratings" are stress ratings only. Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.62 in. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad. ELECTRICAL CHARACTERISTICS TYPE NUMBER Reverse Stand-Off Voltage Reverse Leakage Current Peak Pulse Current Clamping Voltage Clamping Voltage Reverse Breakdown Voltage Diode Capacitance SYMBOL VRWM IR IPP VC VC VBR Cd ( T = 25 o C unless otherwise noted, Per Diode) Min. 6.1 Typ. 10 22 Max. 5.0 35 2.0 9.5 11 7.2 28 UNIT V nA A V V V pF IPP = 1 A IPP = 2 A IT = 1mA, F=1MHz,VR=0V TEST CONDITI ONS VRWM = 5 V http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Page 1 of 2 24-Sep-2007 Rev. B KS05B3 Elektronische Bauelemente VOLTAGE: 5.0 V 40 W Transient Voltage Suppressors Diode ELECTRICAL CHARACTERISTIC CURVES Pulse Waveform 110 100 90 80 Percent of Ipp 70 60 50 40 30 20 10 0 0 5 10 15 Time (uS) 20 25 30 0 Clamping Voltage vs. Peak Pulse Current Waveform Pa rameters tr = 8µs td = 20µs 15 Clamping Voltage- Vc(V) e -t 10 td = IPP/2 5 0 1 2 3 Peak Pulse Current-Ipp(A) Typical Capacitance vs. Reverse Voltage 30 Recommended Pad Layout Diode Capacitance (pF) 0.80 (.032") 1.00 (.040") 20 1.40 (.055") MAX 10 3.40 (.134") 2.20 3.60 (.140") (.087") REF 1.90 (.075") 1.70 (.067") BSC 0 0 1 2 3 4 5 1.00 (.040") 1.20 (.048") 0.80 (.032") 1.00 (.040") Diode Reverse Voltage (V) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Page 2 of 2 24-Sep-2007 Rev. B
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