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KS33J4

KS33J4

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    KS33J4 - 40 W Transient Voltage Suppressor Diode - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
KS33J4 数据手册
KS33J4 Elektronische Bauelemente Voltage: 3.3 V 40 W Transient Voltage Suppressor Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Designed to protect voltage sensitive components from ESD Excellent clamping capability, low leakage and fast response Cellular phones, MP3 players, digital cameras ... etc. Suitable for electronics where board space is a major design consideration A E SOT-353 L B F H J Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 C K FEATURES Response time is typically < 1 ns Low leakage Stand-off voltage:3.3 V ESD rating of class 3 (> 15 kV) per human body model IEC61000-4-2 level 4 ESD protection DG REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. MARKING CODE 33J4 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol VESD PD TL RθJA TJ, TSTG IEC61000-4-2 (ESD) Parameter air discharge contact discharge Total Power Dissipation on FR-5 board (Note 2) Lead Solder Temperature - Max. (10 sec duration) Thermal Resistance Junction-to-ambient Junction and Storage Temperature Range Value 15 8 385 260 325 -55 ~ +150 Units KV mW °C °C / W °C Stresses exceeding "Maximum Ratings" may damage the device. "Maximum Ratings" are stress ratings only; functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.62 in. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%, mounted on FR-4 board with min pad. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) Type Number Reverse Stand-Off Voltage Reverse Leakage Current Peak Pulse Current Clamping Voltage 1 Clamping Voltage 2 Reverse Breakdown Voltage Test Current Junction Capacitance Peak Power Dissipation http://www.SeCoSGmbH.com/ Symbol VRWM IR IPP VC VC VBR IT C PPK Min. 5.3 - Typ. 1.0 30 - Max. 3.3 250 3.5 9.0 12.0 5.9 40 40 Unit V nA A V V V mA pF Test Conditions VRWM = 3.3 V IPP = 1 A IPP = 3.5 A IT = 1 mA, TAMB = 25 °C (@8x20 μS, @ TA< & = 25 °C; W Non-repetitive current per Figure 1.) Any changes of specification will not be informed individually. 24-Aug-2008 Rev. B Page 1 of 2 KS33J4 Elektronische Bauelemente Voltage: 3.3 V 40 W Transient Voltage Suppressor Diode RATINGS AND CHARACTERISTICS CURVES Pulse Waveform 110 100 90 80 Waveform Parameters tr = 8µs td = 20µs e -t Clamping Voltage vs. Peak Pulse Current 15 Waveform Parameters tr = 8μs td = 20μs 10 70 60 50 40 30 20 10 0 0 5 10 Clamping Voltage- Vc(V) Percent of Ipp td = IPP/2 5 0 0 1 2 3 4 5 6 15 Time (μS) 20 25 30 Peak Pulse Current-Ipp(A) APPLICATION NOTE The KS33J4 is designed for the uni-direction of up to four lines from the damage caused by Electronic Discharge (ESD) and surge pulses. The KS33J4 may be used on line where the signal polarities are above or below ground.KS33J4 can with stand and provides protection from a surge of 40 watts peak pulse power per line for a 8/20 μs waveform. High speed data line Typical application for uni-directional protection of four lines. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Aug-2008 Rev. B Page 2 of 2
KS33J4 价格&库存

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