KS33K5

KS33K5 Elektronische Bauelemente Voltage: 3.3 V 40 W Transient Voltage Suppressor Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Designed to protect voltage sensitive components from ESD Excellent clamping capability, low leakage and fast response Cellular phones, MP3 players, digital cameras ... etc. Suitable for electronics where board space is a major design consideration A E SOT-363 L B F H J Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 C K FEATURES Response time is typically < 1 ns Low leakage Stand-off voltage: 3.3 V ESD rating of class 3 (> 15 kV) per human body model IEC61000-4-2 level 4 ESD protection DG REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. MARKING CODE 33K5 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol VESD PD TL RθJA TJ, TSTG Parameter air discharge contact discharge Total Power Dissipation on FR-5 board (Note 2) Lead Solder Temperature - Max. (10 sec duration) Thermal Resistance Junction-to-ambient Junction and Storage Temperature Range ESD Voltage IEC61000-4-2 (ESD) Value 15 8 150 260 833 -55 ~ +150 Units KV mW °C °C / W °C Stresses exceeding "Maximum Ratings" may damage the device. "Maximum Ratings" are stress ratings only. Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.62 in. 2. Only 1 diode under power. For all 5 diodes under power, PD will be 20%. Mounted on FR-4 board with min pad. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) Type Number Reverse Stand-Off Voltage Reverse Leakage Current Peak Pulse Current Clamping Voltage Clamping Voltage Reverse Breakdown Voltage Test Current Junction Capacitance Peak Power Dissipation Symbol VRWM IR IPP VC VC VBR IT C PPK Min. 5.35 Typ. 80 5.7 1.0 30 Max. 3.3 250 3.5 9.0 12.0 5.85 40 40 Unit V nA A V V V mA pF W Test Conditions VRWM = 3.3 V IPP = 1 A IPP = 3.5 A IT = 1 mA, TAMB = 25 °C F = 1MHz, TAMB = 25°C (@8x20 μS,@ TA