KSD471A

KSD471A Elektronische Bauelemente NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4 . 5 5 ±0 . 2 3 . 5 ±0 . 2 4 . 5 ±0 . 2 1 4 . 3 ±0 . 2 FEATURES Complement to KSB564A Collector Current : IC = 1A Collector Dissipation : PC = 800mW 0 . 4 3 + 0 .0 8 0 . 4 6 ±0 . 1 …0.07 MAXIMUM RATINGS (TA=25 Symbol VCBO VCEO VEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage unless otherwise noted) Value 40 30 5 1 0.8 150 -55-150 Units V V V A W ℃ ℃ 123 2 . 5 4 ±0 . 1 Parameter ( 1 . 2 7 T yp. ) 1 . 2 5 ±0 . 2 1 : E mitte r 2: B a s e 3 : C olle c tor Collector Current -Continuous Collector Power Dissipation Tj Tstg Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Output Capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) Cob fT Test conditions MIN 40 30 5 0.1 70 400 0.5 1.2 16 130 V V pF MHz TYP MAX UNIT V V V μA IC=100uA, IE=0 IC=10mA, IB=0 IE=100μA, IC=0 VCB=30V, IE=0 VCE=1V, IC=100mA IC=1A, IB=0.1A IC=1A, IB=0.1A VCB=6V, IE=0,f=1MHZ VCE=6V, IC=10mA CLASSIFICATION OF hFE Rank Range O 70-140 Y 120-240 G 200-400 http://www.SeCoSGmbH.com/ 01-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 1 of 2 KSD471A Elektronische Bauelemente NPN Silicon General Purpose Transistor Characteristics Curve http://www.SeCoSGmbH.com/ 01-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 2 of2