KTD1304

KTD1304 Elektronische Bauelemente 0.3 A, 25 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES High emitter-base voltage: VEBO=12V(Min) low on resistance: Ron=0.6Ω(max)(IB=1mA) PACKAGE DIMENSIONS 3 Collector 1 SOT-23 Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 Base 2 Emitter A L 3 H K 2 J J K C Top View 1 BS L S V V G D H All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings 25 20 12 300 200 +150, -55 ~ +150 Unit V V V mA mW ℃ CHARACTERISTICS at Ta = 25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 (FORWARD) hFE1 (REVERSE) VCE(sat) VBE(sat) fT COB R(ON) Min. 25 20 12 200 20 - Typ. 60 10 0.6 Max. 0.1 0.1 1000 0.25 1 - Unit V V V uA uA IC = 100 uA IC = 1 mA IE = 100 uA VCB = 25 V VEB = 12 V Test Conditions VCE = 2 V, IC=4 mA VCE = 2 V, IC=4 mA V V MHz pF Ω IC =100 mA, IB=10 mA IC =100 mA, IB=10 mA VCE = 10 V, IC = 1 mA, f = 100 MHz VCB = 10 V, IE = 0, f = 1 MHz VIN=0.3 V, IB=1mA, f=1KHz 01-June-2005 Rev. A Page 1 of 2 KTD1304 Elektronische Bauelemente 0.3 A, 25 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES KTD1304 01-June-2005 Rev. A Page 2 of 2