0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MMBD1501A

MMBD1501A

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    MMBD1501A - Plastic-Encapsulated Diode - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
MMBD1501A 数据手册
MMBD1501A~ MMBD1505A Elektronische Bauelemente Plastic-Encapsulated Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 A FEATURES  L 3 3 High conductance Low Leakage Diode 1 Top View 2 CB 1 2 K E D MARKING Part Name Marking MMBD1501A A11 MMBD1503A A13 MMBD1504A A14 MMBD1505A A15 F G H J REF. A B C D E F Circuit Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 ABSOLUTE MAXIMUM RATINGS (@ Ta = 25°C) PARAMETER Working Inverse Voltage DC Forward Current Average Rectifying Current Total Device Dissipation Thermal Resistance, Junction to Ambient Surge Current Junction, Storage Temperature 1s 1 microsecond SYMBOL VR IF IO PD RθJA ISURGE TJ , TSTG LIMITS 200 600 200 350 357 1 2 150, -55~150 UNIT V mA mA mW °C/W A A °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise specified) Parameters Reverse Breakdown Voltage Reverse voltage leakage current Symbol V(BR) IR VF1 VF2 VF3 VF4 VF5 VF6 CD Min. 200 - Max. 10 0.75 0.85 0.95 1.1 1.3 1.5 4 Unit V nA V V V V V V pF Test Conditions IR =5µA VR =180V IF = 1 m A IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 300 mA VR = 0, f = 1 MHz Forward Voltage Diode Capacitance http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Nov-2010 Rev. B Page 1 of 2 MMBD1501A~ MMBD1505A Elektronische Bauelemente Plastic-Encapsulated Diode RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Nov-2010 Rev. B Page 2 of 2
MMBD1501A 价格&库存

很抱歉,暂时无法提供与“MMBD1501A”相匹配的价格&库存,您可以联系我们找货

免费人工找货