MMBD318C

MMBD318 Series MMBD318/MMBD318A/MMBD318C/MMBD318S Elektronische Bauelemente FEATURES Surface Mount High Votlage Switching Diode A suffix of "-C" specifies halogen & lead-free • RoHS Compliant Product High Reverse Breakdown Voltage Ultra high speed Switching High Conductance SC-59 A Dim L BS Min 2.700 1.400 1.000 0.350 1.800 0.000 0.085 0.400 0.850 2.400 0.450 Max 3.100 1.600 1.400 0.500 2.000 0.100 0.177 0.600 1.150 2.800 0.550 A B C D G H C Top View MECHANICAL DATA Case: SC59, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any V G J K K J D H 3 1 2 L S V All Dimension in mm 3 3 3 3 1 2 1 2 1 2 1 2 MMBD318 Marking: LD6 MMB D318A Marking: LD7 MMB D318C Marking: LD8 MMB D318S Marking: LD9 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter Max.Repetitive Peak Reverse Voltage Max.RMS Voltage Max. DC Blocking Voltage Max. Average Forward Rectified Current Typical Junction Capacitance between Terminal (Note 1) Max. Reverse Recovery Time (Note2) Non-Repetive Peak Forward surge Current @Tp=1.0us @Tp= 1.0s Power Dissipation Thermal Resistance Junction to Ambient Air Operation and Storage Temperature Range Symbol V RRM V RMS VDC Io Cj Trr I FSM PD RθJA Tj ,TSTG Ratings 350 212 300 225 5.0 50 4 1 350 357 -60~+150 mW °C /W °C Unit V V V mA pF ns A Electrical Characteristics (AT TA = 25°C unless otherwise noted) Characteristics Reverse Breakdown Voltage. Average Reverse Current. IR=150uA VR=240V, TA=25 °C VR=240V, TA=150°C Forward Voltage Symbol VR IR VF Min. 350 Max. Unit V nA uA V 100 100 1.0 - Note: 1. Measured at 1.0 MHz and applied reverse of 0 voltage 2. Measured at applied forware current of 30mA, RL=100Ω and recovery to IRR=-3mA 3. ESD sensitive product handling required. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 MMBD318 Series MMBD318/MMBD318A/MMBD318C/MMBD318S Elektronische Bauelemente Surface Mount High Votlage Switching Diode IF, INSTANTANEOUS FORWARD CURRENT (mA) 500 1000 Pd, POWER DISSIPATION (mW) 400 100 Tj = 150° C 300 10 Tj = 25° C 200 1.0 0.1 100 0.01 0 400 800 1200 1600 2000 0 0 100 TA, AMBIENT TEMPERATURE, (°C) Fig. 1 Power Derating Curve, total package 200 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 2 Typical Forward Characteristics, per element 1.1 1000 Tj = 150° C CT, TOTAL CAPACITANCE (pF) 100 10 1.0 Tj = 75° C 1.0 0.1 0.9 Tj = 25° C 0.8 0.01 0.001 0 50 100 150 200 250 300 350 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics, per element 0.7 0.01 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance vs. Reverse Volta ge, per element http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2