MMBD4148F

MMBD4148F

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    MMBD4148F - Plastic-Encapsulated Switching Diode - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
MMBD4148F 数据手册
MMBD4148F Elektronische Bauelemente Plastic-Encapsulated Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION Fast switching speed For general purpose switching applications High conductance 1 A L 3 3 Top View 2 CB 1 2 K E D MARKING: A2 F G REF. A B C D Millimeter Min. Max. 1.05 REF. 0.20 REF. 0.80 1.00 0.25 0.40 H Millimeter Min. Max. 0.080 0.180 1.15 1.45 1.60 1.80 2.30 2.70 J 3 REF. E F G H 1 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Junction & Storage Temperature @ t = 1.0µs @ t = 1.0s SYMBOL VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA TJ,TSTG VALUE 100 75 75 75 53 300 150 2.0 1.0 200 625 150, -65~150 UNIT V V V V V mA mA A mW K/W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Reverse Breakdown Voltage Reverse Voltage Leakage Current SYMBOL V(BR)R IR MIN. 75 - MAX. 1 25 0.715 0.855 1.00 1.25 2 4 UNIT V µA nA V V V V pF nS TEST CONDITION IF = 10µA VR = 75V VR = 20V IF = 1mA IF = 10mA IF = 50mA IF = 150mA VR = 0V, f = 1MHz IF = IR = 10mA, Irr = 0.1 x IR RL =100 Forward Voltage VF Diode Capacitance Reverse Recovery Time CD tRR 22-Feb-2010 Rev. B Page 1 of 2 MMBD4148F Elektronische Bauelemente Plastic-Encapsulated Switching Diode RATINGS AND CHARACTERISTIC CURVES 22-Feb-2010 Rev. B Page 2 of 2
MMBD4148F 价格&库存

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