MMBD4448DW

MMBD4448DW Elektronische Bauelemente Surface Mount Switching Diode Array RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-363 · · · Fast Switching Speed Ultra-Small Surface Mount Package High Conductance Power dissipation .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8 o 0 o MECHANICAL DATA · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.006 grams (approx.) Mounting Position: Any 6 4 5 O .096(2.45) .085(2.15) .053(1.35) .045(1.15) .018(0.46) .010(0.26) 1 2 3 .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) 6 5 4 .043(1.10) .035(0.90) 1 2 3 MMBD4448 DW Marking: KA3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Rectified out Current(Note 1) Forward Continuous Current (Note 1) Thermal Resistance Junction to Ambient Air (Note1) Storage Temperature Range Symbol VRM VRRM VR(RMS) Io I FM R thJA Tstg Value 100 75 53 250 500 625 – 55 to +150 Unit V V V mA mA °C/W °C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) IF=5.0mA IF=10mA IF=50mA IF=150mA Reverse Current (Note 2) VR=75V VR=75V, Tj=150 C O Symbol V(BR)R Min 75 0.62 — — — — Max — 0.72 0.855 1.0 1.25 2.5 50 30 25 4.0 4.0 Unit V VF V uA uA uA nA pF nS VR=25V, Tj=150OC VR=20V Total Capacitance VR=0, f=1.0MHz Reverse Recovery Time IF=IR=10mA, Irr=0.1XIR,RL=100 Ohms Note 2. Short duration test pulse used to minimize self-heating. http://www.SeCoSGmbH.com IR — — — — — CT t rr Any changing of specification will not be informed individual 01-Jan-2006 Rev.B Page 1 of 2 MMBD4448DW Elektronische Bauelemente Surface Mount Switching Diode Array 1000 10000 TA = 125ºC IF, INSTANTANEOUS FORWARD CURRENT (mA) IR, INSTANTANEOUS REVERSE CURRENT (nA) 1000 100 TA = 75ºC 100 10 TA = -40ºC TA = 0ºC 10 TA = 25ºC 1 TA = 25ºC TA = 75ºC TA = 125ºC 1 TA = 0ºC TA = -40ºC 0.1 0.8 0.4 1.2 1.6 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 3 f = 1MHz 0.1 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 250 2.5 CT, TOTAL CAPACITANCE (pF) 2 Pd, POWER DISSIPATION (mW) 0 10 20 30 40 200 150 1.5 100 1 0.5 50 0 0 0 100 TA, AMBIENT TEMPERATURE (° C) Fig. 4 Power Derating Curve, Total Package 200 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Total Capacitance vs. Reverse Voltage 2.5 trr, REVERSE RECOVERY TIME (nS) 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 IF, FORWARD CURRENT (mA) Fig. 5 Reverse Recovery Time vs Forward Current. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev.B Page 2 of 2