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MMBD4448F

MMBD4448F

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    MMBD4448F - Plastic-Encapsulated Switching Diode - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
MMBD4448F 数据手册
MMBD4448F Elektronische Bauelemente Plastic-Encapsulated Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION Fast switching speed For general purpose switching applications High conductance Surface mount package ideally suited for automatic insertion K A L 3 3 Top View 1 2 CB 1 2 E D MARKING: KA3 3 F G H J REF. A B C D 1 2 Millimeter Min. Max. 1.05 REF. 0.20 REF. 0.80 1.00 0.25 0.40 REF. E F G H Millimeter Min. Max. 0.080 0.180 1.15 1.45 1.60 1.80 2.30 2.70 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Storage Temperature @ t = 1.0µs @ t = 1.0s SYMBOL VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA TSTG VALUE 100 75 75 75 53 500 250 4.0 1.5 200 625 -65~150 UNIT V V V V V mA mA A mW °W C/ ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Forward Voltage SYMBOL VF1 VF2 VF3 VF4 IR1 IR2 CT tRR MIN. 0.62 - MAX. 0.720 0.855 1.00 1.25 2.5 25 4 4 UNIT V V V V µA nA pF nS TEST CONDITION IF = 5mA IF = 10mA IF = 100mA IF = 150mA VR = 75V VR = 20V VR = 0V, f = 1MHz IF = IR = 10mA, Irr = 0.1 x IR RL =100 Reverse Current Capacitance Between Terminals Reverse Recovery Time 25-Dec-2009 Rev. A Page 1 of 2 MMBD4448F Elektronische Bauelemente Plastic-Encapsulated Switching Diode RATINGS AND CHARACTERISTIC CURVES 25-Dec-2009 Rev. A Page 2 of 2
MMBD4448F 价格&库存

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