MMBD4448HADW

MMBD4448HAQW ADW/CDW/SDW/TW Elektronische Bauelemente Surface Mount Switching Diode Array RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-363 FEATURES · · · Fast Switching Speed Ultra-Small Surface Mount Package High Conductance Power dissipation .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF .096(2.45) .085(2.15) 8 o 0 o .053(1.35) .045(1.15) MECHANICAL DATA .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.006 grams (approx.) Mounting Position: Any 6 5 4 O .043(1.10) .035(0.90) 1 2 3 Dimensions in inches and (millimeters) 6 5 4 6 5 4 6 5 4 6 5 4 6 5 4 1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 MMBD4448HAQW Marking: KA5 MMBD4448HADW Marking: KA6 MMBD4448HCDW Marking: KA7 MMBD4448HSDW Marking: KAB MMBD4448HTW Marking: KAA MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage RMS Reverse Voltage Average Rectified out Current(Note 1) Forward Continuous Current (Note 1) Thermal Resistance Junction to Ambient Air (Note1) Storage Temperature Range Symbol VRM VRRM VR(RMS) Io I FM R thJA Tstg Value 100 80 57 250 500 625 – 55 to +150 Unit V V V mA mA °C/W °C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) IF=5.0mA IF=10mA IF=100mA IF=150mA Reverse Current (Note 2) VR=70V VR=75V, Tj=150 C O Symbol V(BR)R Min 80 0.62 — — — — Max Ð 0.72 0.855 1.0 1.25 100 50 30 25 3.5 4.0 Unit V VF V nA uA uA nA pF nS VR=25V, Tj=150OC VR=20V Total Capacitance VR=6V, f=1.0MHz Reverse Recovery Time IF=IR=10mA, Irr=0.1XIR,RL=100 Ohms Note 2. S hort duration tes t puls e us ed to minimize s elf-heating. http://www.SeCoSGmbH.com IR — — — — — CT t rr Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 1 of 2 MMBD4448HAQW ADW/CDW/SDW/TW Elektronische Bauelemente Surface Mount Switching Diode Array IR, INSTANTANEOUS REVERSE CURRENT (nA) 10000 TA = 125ºC IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 1000 100 TA = 75ºC 100 10 TA = -40ºC TA = 0ºC 10 TA = 25ºC 1 TA = 25ºC TA = 75ºC TA = 125ºC 1 TA = 0ºC TA = -40ºC 0.1 0.8 0.4 1.2 1.6 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 3 f = 1MHz 0.1 0 20 40 60 80 100 VR, REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics 250 2.5 CT, TOTAL CAPACITANCE (pF) 2 Pd, POWER DISSIPATION (mW) 0 10 20 30 40 200 150 1.5 100 1 0.5 50 0 0 0 100 TA, AMBIENT TEMPERATURE (° C) Fig. 4 Power Derating Curve, Total Package 200 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Total Capacitance vs. Reverse Voltage 2.5 trr, REVERSE RECOVERY TIME (nS) 2.0 1.5 1.0 0.5 0 0 2 4 6 8 10 IF, FORWARD CURRENT (mA) Fig. 5 Reverse Recovery Time vs Forward Current. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 2 of 2