MMBD4448T Series
Elektronische Bauelemente Plastic-Encapsulated Switching Diode
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Fast switching speed For general purpose switching applications High conductance
1
SOT-523
A
3 3
L
Top View
2
CB
1 2
K
E D
MARKING
Part Name Marking
MMBD4448T A3 MMBD4448TA A6 MMBD4448TC A7 MMBD4448TS A8
F
REF. A B C D E F
G
Millimeter Min. Max. 1.50 1.70 1.45 1.75 0.75 0.85 0.70 0.90 0.90 1.10 0.25 0.33
H
REF. G H J K L
J
Millimeter Min. Max. 0.00 0.15 0.28 0.40 0.10 0.20 0.75 0.85
Circuit
ABSOLUTE MAXIMUM RATINGS (Single Diode @ Ta = 25°C)
Parameter
Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Storage Temperature @ t = 1.0µs @ t = 1.0s
Symbol
VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA TSTG
Value
100 80 57 500 250 4.0 1.5 150 833 -65 ~ 150
Unit
V V V mA mA A mW ℃/W ℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage Forward Voltage (Note 2)
Symbol
VR VF1 VF2 VF3 VF4 IR CT tRR
Min.
80 0.62 -
Max.
0.720 0.855 1.00 1.25 0.10 25 3.50 4.00
Unit
V V V V V µA nA pF nS
Test Conditions
IR = 2.5 µA IF = 5.0 mA IF = 10 mA IF = 100 mA IF = 150 mA V R = 70 V V R = 20 V VR = 6 V, f = 1.0 MHz VR = 6 V, IF = 5.0 mA
Peak Reverse Current (Note 2) Total Capacitance Reverse Recovery Time
01-Jun-2008 Rev. A
Page 1 of 2
MMBD4448T Series
Elektronische Bauelemente Plastic-Encapsulated Switching Diode
RATINGS AND CHARACTERISTIC CURVES (MMBD4448T)
01-Jun-2008 Rev. A
Page 2 of 2
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