MMBD4448TS

MMBD4448T Series Elektronische Bauelemente Plastic-Encapsulated Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Fast switching speed For general purpose switching applications High conductance 1 SOT-523 A 3 3 L Top View 2 CB 1 2 K E D MARKING Part Name Marking MMBD4448T A3 MMBD4448TA A6 MMBD4448TC A7 MMBD4448TS A8 F REF. A B C D E F G Millimeter Min. Max. 1.50 1.70 1.45 1.75 0.75 0.85 0.70 0.90 0.90 1.10 0.25 0.33 H REF. G H J K L J Millimeter Min. Max. 0.00 0.15 0.28 0.40 0.10 0.20 0.75 0.85 Circuit ABSOLUTE MAXIMUM RATINGS (Single Diode @ Ta = 25°C) Parameter Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Storage Temperature @ t = 1.0µs @ t = 1.0s Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA TSTG Value 100 80 57 500 250 4.0 1.5 150 833 -65 ~ 150 Unit V V V mA mA A mW ℃/W ℃ ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Parameters Reverse Breakdown Voltage Forward Voltage (Note 2) Symbol VR VF1 VF2 VF3 VF4 IR CT tRR Min. 80 0.62 - Max. 0.720 0.855 1.00 1.25 0.10 25 3.50 4.00 Unit V V V V V µA nA pF nS Test Conditions IR = 2.5 µA IF = 5.0 mA IF = 10 mA IF = 100 mA IF = 150 mA V R = 70 V V R = 20 V VR = 6 V, f = 1.0 MHz VR = 6 V, IF = 5.0 mA Peak Reverse Current (Note 2) Total Capacitance Reverse Recovery Time 01-Jun-2008 Rev. A Page 1 of 2 MMBD4448T Series Elektronische Bauelemente Plastic-Encapsulated Switching Diode RATINGS AND CHARACTERISTIC CURVES (MMBD4448T) 01-Jun-2008 Rev. A Page 2 of 2