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MMBD4448Z

MMBD4448Z

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    MMBD4448Z - 0.25A , 100V Plastic-Encapsulated Switching Diode - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
MMBD4448Z 数据手册
MMBD4448Z 0.25A , 100V Elektronische Bauelemente Plastic-Encapsulated Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Fast switching speed High Conductance B A SOT-563 MARKING KAL D C F J G H E PACKAGE INFORMATION Package SOT-563 MPQ 3K Leader Size 7 inch REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 0.05 REF. F G H J Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameters Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance, Junction to Ambient Storage Temperature t=1.0µs t=1.0s Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA TSTG Rating 100 80 80 80 57 500 250 4.0 1.5 150 833 -65~150 Unit V V V V V mA mA A mW K/W ° C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Reverse Breakdown Voltage Symbol VR VF1 VF2 VF3 VF4 IR1 IR2 CT TRR Min. 80 0.62 - Max. 0.72 0.855 1.0 1.25 0.1 25 3.5 4 Unit V V V V V µA nA pF nS Test Conditions IR=2.5µA IF=5mA IF=10mA IF=100mA IF=150mA VR=70V VR=20V VR=6V,f=1MHz VR=6V,IF=5mA Forward Voltage Maximum DC Reverse Current at rated DC blocking voltage Capacitance between terminals Maximum Reverse Recovery Time http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jul-2011 Rev. A Page 1 of 2 MMBD4448Z 0.25A , 100V Elektronische Bauelemente Plastic-Encapsulated Switching Diode RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 21-Jul-2011 Rev. A Page 2 of 2
MMBD4448Z 价格&库存

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