MMBD7000

MMBD7000 Ele k troni sche Bauelemente FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A L 3 1 Surface Mount Switching Diode · · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 3 1 2 Top View 2 BS V G C D H K J 1 ANODE 3 CATHODE/ANODE 2 CATHODE MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc SOT-23 Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C All Dimension in mm DEVICE MARKING MMBD7000 = M5C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 50 Vdc) (VR = 100 Vdc) (VR = 50 Vdc, 125°C) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) Capacitance (VR = 0 V) 1. F R ± 5 = 1.0 0 .75 2. Alumina = 0.4 0 .3 0 .062 in. 0 .024 in. 99.5% alumina. V(BR) IR IR2 IR3 VF 0.55 0.67 0.75 trr C — — 0.7 0.82 1.1 4.0 1.5 ns pF 100 — — — — 1.0 3.0 100 Vdc Vdc µAdc http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 MMBD7000 Elektronische Bauelemente Surface Mount Switching Diode 820 Ω +10 V 2k 100 µH 0.1 µF DUT 50 Ω Οutput Pulse Generator 50 Ω Input Sampling Oscilloscope 90% VR Input Signal IR IR(REC) = 1 mA Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) IF 0.1 µF tr 10% tp t IF trr t Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 TA = 85°C 10 VR TA = 25°C 1.0 10 TA = 150°C TA = 125°C I F, Forward Current (mA) TA = –40°C IR, Reverse Current(µA) 1.0 0.1 TA = 85°C TA = 55°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, Forward Voltage(V) 0.001 0 10 20 30 40 50 VR, Reverse Voltage(V) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD, Diode Capacitance(PF) 0.64 0.60 0.56 0.52 0 2.0 4.0 VR, Reverse Voltage(V) 6.0 8.0 Figure 4. Capacitance http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2